منابع مشابه
Design and Fabrication of a 911 GHz Balanced Low Noise Amplifier Using HJFET
This paper describes the design of an X-band balanced low noise amplifier (LNA) using an available HJFET device. The balanced LNA consists of a pair of electrically similar transistors whose input and output signals are divided or combined by 3 dB two-stage Wilkinson power dividers. The proposed balanced LNA is fabricated and measured. The measured results show that the noise figure is 1.30 dB ...
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This paper presents the design, fabrication and performance of a three-stage 155GHz monolithic low noise amplifier (LNA) using 0.1 -pm pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 155 GHz, and more than 10 dB gain from 151 to 156 GHz. When this amplifier is biased for low noise figure, a noise figure of 5.1 dB with associ...
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This paper describes a 1.9 GHz, 25 mW , 0.25 μm CMOS Low Noise Amplifier (LNA), intended for use in a DECT (Digital Enhanced Cordless Communications) Receiver. The LNA has been simulated with Cadence Spectre and the results show that it provides a gain of more than 15 dB, for a noise figure of 2dB, and an input referred IP3 of −5dBm. We present the LNA architecture and the circuit analysis alon...
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The low noise amplifier (LNA) serves as the first component of the radio frequency receiver system. The performance of LNA determines the sensitivity and selectivity of the receiver. In order to maximize performance the gain, noise figure and input matching of LNA needs to be optmized. This paper presents a 60GHz low noise amplifier on 0.13-μm standard CMOS technology designed using classical n...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 1984
ISSN: 0168-9002
DOI: 10.1016/0168-9002(84)90082-2